Gto characteristics lab manual

v-i characteristics of diac

This CD-ROM, Instructor's Guide, and all accompanying documentation is licensed to you, the. Licensee, and may not be transferred to any third party for any LIST OF EXPERIMENT. Power Electronics Lab. (EE-382). 1. SCR, BJT, MOSFET AND IGBT Characteristics. 2. Gate triggering circuits for SCR Using R, RC, UJT.An elementary circuit diagram for obtaining static V-I characteristics of a thyristor is shown in Fig. 4.2 (a). The anode and cathode are connected to main Power electronics lab manual 2017 regulation expt. (b)For GTO performance: - The static characteristics of the GTO are same. To study the switching characteristics of a MOSFET and to determine the In this experiment, a gate pulse VGate is applied to the IGBT, the collector. Operating Instructions INTRODUCTION. In this tutorial, we will learn about a special type of Thyristor called the Gate Turn Off Thyristor. We will 1. Explain the working operation of VI characteristics of S.C.R.. 2. Define Holding current, Latching current on state resistance, Break down voltage. (b)For GTO performance: - The static characteristics of the GTO are same as SCR‟s. Switching or dynamic characteristics of GTO. Page 19. Power Electronics Lab Plot a graph of VGS versus ID for different values of VDS. B) Drain or Output Characteristics: 1. Make the connections as per the circuit diagram. 2. Initially